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NTE2917

Junction Field Effect Transistor (JFET) by NTE Electronics (21 more products)
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NTE2917 Image

The NTE2917 from NTE Electronics is a Junction Field Effect Transistor (JFET) with Forward Transfer Admittance 150 to 1200 uS, Continous Drain Current 10 mA, Drain Source Breakdown Voltage 20 V, Gate Current 10 mA, Power Dissipation 0.1 W. Tags: Through Hole. More details for NTE2917 can be seen below.

Product Specifications

Product Details

  • Part Number
    NTE2917
  • Manufacturer
    NTE Electronics
  • Description
    0.1 W, 20 V, 10 mA, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Forward Transfer Admittance
    150 to 1200 uS
  • Continous Drain Current
    10 mA
  • Drain Source Breakdown Voltage
    20 V
  • Gate Current
    10 mA
  • Power Dissipation
    0.1 W
  • Operating Temperature
    -55 to 125 Degree C
  • Input Capacitance
    4.5 to 6.0 pF
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website
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