NTE468

Junction Field Effect Transistor (JFET) by NTE Electronics (21 more products)

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NTE468 Image

The NTE468 from NTE Electronics is a Junction Field Effect Transistor (JFET) with Gate Source Voltage 35 V, Continous Drain Current 20 mA, Drain Source Breakdown Voltage 35 V, Drain Source Resistance 30 Ohm, Gate Current 50 mA. Tags: Through Hole. More details for NTE468 can be seen below.

Product Specifications

Product Details

  • Part Number
    NTE468
  • Manufacturer
    NTE Electronics
  • Description
    0.625 W, 35 V, 50 mA, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    35 V
  • Continous Drain Current
    20 mA
  • Drain Source Breakdown Voltage
    35 V
  • Drain Source Resistance
    30 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    -1.0 nA
  • Power Dissipation
    0.625 W
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    28 pF
  • Package Type
    Through Hole
  • Package
    TO-92
  • Application
    Analog Switches, Choppers, Commutators

Technical Documents