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MMBFJ175LT1G

Junction Field Effect Transistor (JFET) by onsemi (44 more products)
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MMBFJ175LT1G Image

The MMBFJ175LT1G from onsemi is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 7.0 to 60 mA, Gate Source Voltage 3.0 to 6.0 V, Drain Source Resistance 125 Ohm, Gate Reverse Current 1.0 nA, Power Dissipation 0.225 W. Tags: Surface Mount. More details for MMBFJ175LT1G can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBFJ175LT1G
  • Manufacturer
    onsemi
  • Description
    3.0 to 6.0 V, , P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    P-Channel
  • Drain Saturation Current
    7.0 to 60 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    3.0 to 6.0 V
  • Drain Source Resistance
    125 Ohm
  • Gate Reverse Current
    1.0 nA
  • Power Dissipation
    0.225 W
  • Qualification
    AEC-Q101
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    11 pF
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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