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MMBFJ309LT1G

Junction Field Effect Transistor (JFET) by onsemi (44 more products)
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MMBFJ309LT1G Image

The MMBFJ309LT1G from onsemi is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 12 to 30 mA, Gate Source Voltage 25 V, Forward Transfer Admittance 8.0 to 18 mS, Gate Current 10 mA, Gate Reverse Current -1.0 nA. Tags: Surface Mount. More details for MMBFJ309LT1G can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBFJ309LT1G
  • Manufacturer
    onsemi
  • Description
    25 V, 10 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    12 to 30 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    25 V
  • Forward Transfer Admittance
    8.0 to 18 mS
  • Gate Current
    10 mA
  • Gate Reverse Current
    -1.0 nA
  • Power Dissipation
    0.225 W
  • Qualification
    AEC-Q101
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    5.0 pF
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • RoHS Compliant
    Yes

Technical Documents
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