MMBFU310LT1G

Junction Field Effect Transistor (JFET) by onsemi (44 more products)

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The MMBFU310LT1G from onsemi is an N-Channel Field Effect Transistor ideal for industrial and commercial applications. It has a gate-source voltage and a drain-source voltage of up to 25 V. This JFET has a gate current of less than 10 mA. It has a power dissipation of less than 225 mW. This JFET is in a surface-mount package measuring 2.9 x 1.3 mm.

Product Specifications

Product Details

  • Part Number
    MMBFU310LT1G
  • Manufacturer
    onsemi
  • Description
    25 V N-Channel Field Effect Transistor for Industrial Applications

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    24 to 60 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    25 V
  • Forward Transfer Admittance
    10 to 18 mS
  • Gate Current
    10 mA
  • Gate Reverse Current
    -150 nA
  • Power Dissipation
    0.225 W
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    5.0 pF
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • RoHS Compliant
    Yes
  • Dimension
    2.9 x 1.3 mm

Technical Documents