The UJ3N065025K3S from Qorvo is a Silicon Carbide Junction Field Effect Transistor that is ideal for over-current protection circuits, switch-mode power supplies (SMPS), power factor correction modules, motor drives, and induction heating applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of -11.5 V, and a drain-source on-resistance of less than 33 milli-ohms. This transistor has a continuous drain current of up to 62 A and a pulsed drain current of less than 250 A. It is a 3rd generation normally-off transistor that exhibits very low on-resistance and gate charge, thereby allowing for low conduction and switching losses. This RoHS-compliant transistor also has a low intrinsic capacitance. It is available in a through-hole package.