UJ3N065080K3S

Junction Field Effect Transistor (JFET) by Qorvo (7 more products)

Note : Your request will be directed to Qorvo.

UJ3N065080K3S Image

The UJ3N065080K3S from Qorvo is a SiC Field Effect Transistor that is ideal for over-current protection circuits, DC-AC inverters, switch mode power supplies (SMPS), power factor correction modules, motor drives and induction heating applications. It h

Product Specifications

Product Details

  • Part Number
    UJ3N065080K3S
  • Manufacturer
    Qorvo
  • Description
    650 V SiC Field Effect Transistor for SMPS Applications

General

  • Industry
    Industrial, Commercial
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Threshold Voltage
    -11.5 V
  • Continous Drain Current
    32 A
  • Drain Source Breakdown Voltage
    650 V
  • Drain Source Resistance
    80 milli-ohms
  • Power Dissipation
    190 W
  • Gate Charge
    75 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    630 pF
  • Package Type
    Through Hole
  • Package
    TO-247-3L
  • Fall Time
    31 ns
  • Rise Time
    25 ns
  • RoHS Compliant
    Yes
  • Application
    Over Current Protection Circuits, DC-AC Inverters, Switch mode power supplies, Power factor correction modules, Motor drives, Induction heating

Technical Documents