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UJ3N120065K3S

Junction Field Effect Transistor (JFET) by Qorvo (7 more products)
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The UJ3N120065K3S from Qorvo is a Junction Field Effect Transistor (JFET) with Gate Source Threshold Voltage -9.3 to -4.7 V, Continous Drain Current 25 to 34 A, Drain Source Breakdown Voltage 1200 V, Drain Source Resistance 0.055 to 0.142 Ohm, Power Dissipation 254 W. Tags: Through Hole. More details for UJ3N120065K3S can be seen below.

Product Specifications

Product Details

  • Part Number
    UJ3N120065K3S
  • Manufacturer
    Qorvo
  • Description
    254 W, SiC, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Threshold Voltage
    -9.3 to -4.7 V
  • Continous Drain Current
    25 to 34 A
  • Drain Source Breakdown Voltage
    1200 V
  • Drain Source Resistance
    0.055 to 0.142 Ohm
  • Power Dissipation
    254 W
  • Gate Charge
    114 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    1008 pF
  • Package Type
    Through Hole
  • Package
    TO-247-3L
  • Fall Time
    16 ns
  • Rise Time
    43 ns
  • RoHS Compliant
    Yes
  • Application
    Over Current Protection Circuits, DC-AC Inverters, Switch mode power supplies, Power factor correction modules, Motor drives, Induction heating
View details on the manufacturer's website
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