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2N4339

Junction Field Effect Transistor (JFET) by Solitron Devices (55 more products)
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2N4339 Image

The 2N4339 from Solitron Devices is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 0.5 to 1.5 mA, Gate Source Voltage -50 V, Forward Transfer Admittance 800 to 2400 µs, Continous Drain Current 0.1 µA, Drain Source Resistance 1700 Ohm. Tags: Through Hole. More details for 2N4339 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N4339
  • Manufacturer
    Solitron Devices
  • Description
    -50 V, 50 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    0.5 to 1.5 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    -50 V
  • Forward Transfer Admittance
    800 to 2400 µs
  • Continous Drain Current
    0.1 µA
  • Drain Source Resistance
    1700 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    -0.1 to -100 nA
  • Power Dissipation
    0.3 W
  • Operating Temperature
    -55 to 125 Degree C
  • Input Capacitance
    7 pF
  • Noise Figure
    1 dB
  • Package Type
    Through Hole
  • Package
    TO-18

Technical Documents
View details on the manufacturer's website
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