JANTXV2N4857

Junction Field Effect Transistor (JFET) by Solitron Devices (55 more products)

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JANTXV2N4857 Image

The JANTXV2N4857 from Solitron Devices is a Radiation-Tolerant Junction Field Effect Transistor that is ideal for military applications. It has a gate-source voltage of -40 V and a drain-source on-resistance of 40 ohms. This junction field effect transistor (JFET) has a power dissipation of less than 1800 mW. It offers features such as low on resistance, fast switching, and high off-isolation. This MIL-PRF-19500/385-qualified JFET includes S-level equivalent screening options and is radiation-tolerant, making it suitable for demanding environments. It is available in a through-hole package that measures 4.95 x 24.38 mm.

Product Specifications

Product Details

  • Part Number
    JANTXV2N4857
  • Manufacturer
    Solitron Devices
  • Description
    Junction Field Effect Transistor for Military Applications

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    -40 V
  • Continous Drain Current
    20 to 100 mA
  • Drain Source Resistance
    40 ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    -0.25 nA
  • Power Dissipation
    1800 mW
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    8 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • Fall Time
    50 ns
  • Rise Time
    4 ns
  • Dimension
    4.95 x 24.38 mm
  • Application
    Military applications

Technical Documents