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AP10NB3R4LCMT

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The AP10NB3R4LCMT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 22.4 to 156 A, Drain Source Resistance 3.4 to 5.6 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AP10NB3R4LCMT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP10NB3R4LCMT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    100 V, 22.4 to 156 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    22.4 to 156 A
  • Drain Source Resistance
    3.4 to 5.6 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    94 to 150.4 nC
  • Switching Speed
    16 to 125 ns
  • Power Dissipation
    156.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK-5x6
  • Note
    Input Capacitance :- 6368 pF
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