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AP10P135M

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The AP10P135M from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -2.4 to -3 A, Drain Source Resistance 135 to 150 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.3 to -3 V. Tags: Surface Mount. More details for AP10P135M can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP10P135M
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -100 V, -2.4 to -3 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.4 to -3 A
  • Drain Source Resistance
    135 to 150 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.3 to -3 V
  • Gate Charge
    29 to 46 nC
  • Switching Speed
    5 to 42 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Note
    Input Capacitance :- 2440 pF
View details on the manufacturer's website
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