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AP12NB7R6P

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The AP12NB7R6P from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 55.7 to 88 A, Drain Source Resistance 7.6 milli-ohm, Drain Source Breakdown Voltage 120 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for AP12NB7R6P can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP12NB7R6P
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    120 V, 55.7 to 88 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    55.7 to 88 A
  • Drain Source Resistance
    7.6 milli-ohm
  • Drain Source Breakdown Voltage
    120 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    68 to 108.8 nC
  • Switching Speed
    15 to 115 ns
  • Power Dissipation
    113.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 4080 pF
View details on the manufacturer's website
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