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AP15NA4R4TL

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The AP15NA4R4TL from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 118 to 167 A, Drain Source Resistance 4.4 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP15NA4R4TL can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP15NA4R4TL
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    150 V, 118 to 167 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    118 to 167 A
  • Drain Source Resistance
    4.4 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    159 to 254.4 nC
  • Switching Speed
    35 to 118 ns
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TOLL
  • Note
    Input Capacitance :- 11936 pF
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