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AP15TP1R0M

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The AP15TP1R0M from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -0.87 to -1.1 A, Drain Source Resistance 1 to 1.2 ohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.2 to -4 V. Tags: Surface Mount. More details for AP15TP1R0M can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP15TP1R0M
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -150 V, -0.87 to -1.1 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.87 to -1.1 A
  • Drain Source Resistance
    1 to 1.2 ohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1.2 to -4 V
  • Gate Charge
    12 to 19.2 nC
  • Switching Speed
    9 to 24 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Note
    Input Capacitance :- 832 pF
View details on the manufacturer's website
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