AP2302AGN-HF

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP2302AGN-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 3.7 to 4.6 A, Drain Source Resistance 42 to 60 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1.2 V. Tags: Surface Mount. More details for AP2302AGN-HF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP2302AGN-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    20 V , 3.7 to 4.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.7 to 4.6 A
  • Drain Source Resistance
    42 to 60 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1.2 V
  • Gate Charge
    6.5 to 10.4 nC
  • Switching Speed
    9 to 16 ns
  • Power Dissipation
    1.38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Note
    Input Capacitance :- 480 pF

Latest MOSFETs

View more products