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AP2322GN

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The AP2322GN from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 2.0 to 2.5 A, Drain Source Resistance 90 to 150 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.25 to 1 V. Tags: Surface Mount. More details for AP2322GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2322GN
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    20 V , 2.0 to 2.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.0 to 2.5 A
  • Drain Source Resistance
    90 to 150 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.25 to 1 V
  • Gate Charge
    7 to 11 nC
  • Switching Speed
    6 to 16 ns
  • Power Dissipation
    0.833 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23S
  • Note
    Input Capacitance :- 560 pF
View details on the manufacturer's website
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