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AP2623GY

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The AP2623GY from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -1.6 to -2.0 A, Drain Source Resistance 170 to 280 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for AP2623GY can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2623GY
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -30 V, -1.6 to -2.0 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -1.6 to -2.0 A
  • Drain Source Resistance
    170 to 280 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    2.8 to 4.5 nC
  • Switching Speed
    5 to 15 ns
  • Power Dissipation
    1.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Note
    Input Capacitance :- 240 pF
View details on the manufacturer's website
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