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AP2N050H

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The AP2N050H from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 9.4 to 14.8 A, Drain Source Resistance 50 to 80 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.3 to 1.2 V. Tags: Surface Mount. More details for AP2N050H can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2N050H
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    20 V , 9.4 to 14.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.4 to 14.8 A
  • Drain Source Resistance
    50 to 80 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.3 to 1.2 V
  • Gate Charge
    12 to 19.2 nC
  • Switching Speed
    7 to 29 ns
  • Power Dissipation
    17.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 1280 pF
View details on the manufacturer's website
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