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AP2N1K2EN1

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The AP2N1K2EN1 from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 200 mA, Drain Source Resistance 1.2 to 4.8 ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for AP2N1K2EN1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2N1K2EN1
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    0.15 W, 20 V , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 mA
  • Drain Source Resistance
    1.2 to 4.8 ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    0.7 nC
  • Switching Speed
    2 to 30 ns
  • Power Dissipation
    0.15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-723
  • Note
    Input Capacitance :- 44 pF
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