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AP3B020M

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The AP3B020M from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 5.2 to 6.5 A, Drain Source Resistance 20 to 35 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.5 V. Tags: Surface Mount. More details for AP3B020M can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP3B020M
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    1.38 W, -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.2 to 6.5 A
  • Drain Source Resistance
    20 to 35 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.5 V
  • Gate Charge
    5 to 8 nC
  • Switching Speed
    7 to 16 ns
  • Power Dissipation
    1.38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Note
    Input Capacitance :- 880 pF
View details on the manufacturer's website
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