AP3N045LEN

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP3N045LEN from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 3.3 to 4.1 A, Drain Source Resistance 45 to 60 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.3 to 1.5 V. Tags: Surface Mount. More details for AP3N045LEN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP3N045LEN
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    1.25 W, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.3 to 4.1 A
  • Drain Source Resistance
    45 to 60 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.3 to 1.5 V
  • Gate Charge
    11 to 17.6 nC
  • Switching Speed
    7.5 to 22 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23S
  • Note
    Input Capacitance :- 1376 pF

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