The AP3N2R1P from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 129 to 183 A, Drain Source Resistance 2.1 to 3.3 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for AP3N2R1P can be seen below.