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AP3N6R2MT

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The AP3N6R2MT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 17.6 to 50 A, Drain Source Resistance 6.2 to 11.5 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1.4 to 2.2 V. Tags: Surface Mount. More details for AP3N6R2MT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP3N6R2MT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    30 V, 17.6 to 50 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17.6 to 50 A
  • Drain Source Resistance
    6.2 to 11.5 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.2 V
  • Gate Charge
    11 to 17.6 nC
  • Switching Speed
    9 to 65 ns
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK-5x6
  • Note
    Input Capacitance :- 2880 pF
View details on the manufacturer's website
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