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AP4N3R2MT

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The AP4N3R2MT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 24.3 to 135 A, Drain Source Resistance 3.2 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 5 V. Tags: Surface Mount. More details for AP4N3R2MT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP4N3R2MT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    40 V, 24.3 to 135 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    24.3 to 135 A
  • Drain Source Resistance
    3.2 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 5 V
  • Gate Charge
    89 to 142 nC
  • Switching Speed
    15 to 45 ns
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK
  • Note
    Input Capacitance :- 8160 pF
View details on the manufacturer's website
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