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AP4NA2R2HCST

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The AP4NA2R2HCST from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 29 to 160 A, Drain Source Resistance 2.28 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP4NA2R2HCST can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP4NA2R2HCST
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    40 V, 29 to 160 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    29 to 160 A
  • Drain Source Resistance
    2.28 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    50 to 80 nC
  • Switching Speed
    12 to 72 ns
  • Power Dissipation
    96.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SPPAK
  • Note
    Input Capacitance :- 4000 pF
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