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AP4NA2R8MT

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The AP4NA2R8MT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 26 to 113 A, Drain Source Resistance 2.8 to 4.9 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AP4NA2R8MT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP4NA2R8MT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    40 V, 26 to 113 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    26 to 113 A
  • Drain Source Resistance
    2.8 to 4.9 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    38 to 60.8 nC
  • Switching Speed
    5 to 45 ns
  • Power Dissipation
    59.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK
  • Note
    Input Capacitance :- 3360 pF
View details on the manufacturer's website
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