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AP4P012LEH

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The AP4P012LEH from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -32 to -51 A, Drain Source Resistance 13.5 to 18 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for AP4P012LEH can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP4P012LEH
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -40 V, -32 to -51 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -32 to -51 A
  • Drain Source Resistance
    13.5 to 18 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    32 to 51.2 nC
  • Switching Speed
    42 to 450 ns
  • Power Dissipation
    54.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 6720 pF
View details on the manufacturer's website
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