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AP50AN680I

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The AP50AN680I from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 0.685 ohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for AP50AN680I can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP50AN680I
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    34.7 W, 500 V, 9 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    0.685 ohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    29 to 46.4 nC
  • Switching Speed
    17 to 85 ns
  • Power Dissipation
    34.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220CFM
  • Note
    Input Capacitance :- 1792 pF
View details on the manufacturer's website
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