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AP5525DT1

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The AP5525DT1 from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 2.1 to 2.7 A, Drain Source Resistance 160 to 200 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AP5525DT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP5525DT1
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    20.8 W, 100 V, 2.1 to 2.7 A, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.1 to 2.7 A
  • Drain Source Resistance
    160 to 200 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    14 to 22.4 nC
  • Switching Speed
    4.5 to 19 ns
  • Power Dissipation
    20.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5045-12L
  • Note
    Input Capacitance :- 1344 pF
View details on the manufacturer's website
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