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AP60AN4K8H

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The AP60AN4K8H from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 4.8 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP60AN4K8H can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP60AN4K8H
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    31.2 W, 600 V, 1.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    4.8 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    9.5 to 15.2 nC
  • Switching Speed
    6 to 14 ns
  • Power Dissipation
    31.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 480 pF
View details on the manufacturer's website
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