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AP65AN1K2S

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The AP65AN1K2S from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 1.2 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP65AN1K2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP65AN1K2S
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    104 W, 650 V, 7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    1.2 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    28 to 44.8 nC
  • Switching Speed
    17 to 79 ns
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Note
    Input Capacitance :- 2048 pF
View details on the manufacturer's website
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