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  6. AP6679GS/P-A-HF

AP6679GS/P-A-HF

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The AP6679GS/P-A-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -41 to -65 A, Drain Source Resistance 13.5 to 20 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -0.8 to -2.5 V. Tags: Through Hole. More details for AP6679GS/P-A-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6679GS/P-A-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -40 V, 89 W, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -41 to -65 A
  • Drain Source Resistance
    13.5 to 20 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -0.8 to -2.5 V
  • Gate Charge
    43 to 70 nC
  • Switching Speed
    11 to 80 ns
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 4590 pF
View details on the manufacturer's website
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