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AP6982GN2-HF

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The AP6982GN2-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 8.7 to 11 A, Drain Source Resistance 9.3 to 21 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for AP6982GN2-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6982GN2-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 2.4 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.7 to 11 A
  • Drain Source Resistance
    9.3 to 21 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    22 to 35.2 nC
  • Switching Speed
    9 to 40 ns
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN 2x2
  • Note
    Input Capacitance :- 2400 pF
View details on the manufacturer's website
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