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AP6B1K0EU6

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The AP6B1K0EU6 from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -310 to -390 mA, Drain Source Resistance 1 to 1.4 ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for AP6B1K0EU6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6B1K0EU6
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -60 V, 0.277 W, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -310 to -390 mA
  • Drain Source Resistance
    1 to 1.4 ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    2.5 to 4 nC
  • Switching Speed
    4 to 19 ns
  • Power Dissipation
    0.277 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Note
    Input Capacitance :- 136 pF
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