AP6C058YT

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP6C058YT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 3.6 to 11.4 A, Drain Source Resistance 58 to 70 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 3 V. Tags: Surface Mount. More details for AP6C058YT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6C058YT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 2.5 W, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.6 to 11.4 A
  • Drain Source Resistance
    58 to 70 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 3 V
  • Gate Charge
    14.5 to 23.2 nC
  • Switching Speed
    4 to 18 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK
  • Note
    Input Capacitance :- 1280 pF

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