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AP6N4R2BP

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The AP6N4R2BP from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 65 to 103 A, Drain Source Resistance 4.2 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for AP6N4R2BP can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6N4R2BP
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 78.1 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    65 to 103 A
  • Drain Source Resistance
    4.2 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    73 to 117 nC
  • Switching Speed
    19 to 90 ns
  • Power Dissipation
    78.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 6530 pF
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