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AP6NA1R7LCMT

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The AP6NA1R7LCMT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 33.6 to 190 A, Drain Source Resistance 1.7 to 2.4 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 3 V. Tags: Surface Mount. More details for AP6NA1R7LCMT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP6NA1R7LCMT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    60 V, 104 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    33.6 to 190 A
  • Drain Source Resistance
    1.7 to 2.4 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 3 V
  • Gate Charge
    120 to 192 nC
  • Switching Speed
    17 to 120 ns
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK
  • Note
    Input Capacitance :- 9440 pF
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