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AP83T03GJB

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The AP83T03GJB from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 53 to 75 A, Drain Source Resistance 6 to 11 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for AP83T03GJB can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP83T03GJB
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    30 V, 53 to 75 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    53 to 75 A
  • Drain Source Resistance
    6 to 11 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    21 to 34 nC
  • Switching Speed
    9.5 to 86 ns
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251S
  • Note
    Input Capacitance :- 1840 pF
View details on the manufacturer's website
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