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AP8NA2R2CXT

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The AP8NA2R2CXT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 28 to 168 A, Drain Source Resistance 2.2 to 3.8 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP8NA2R2CXT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP8NA2R2CXT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    80 V, 28 to 168 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    28 to 168 A
  • Drain Source Resistance
    2.2 to 3.8 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    112 to 179 nC
  • Switching Speed
    24 to 63 ns
  • Power Dissipation
    113.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK
  • Note
    Input Capacitance :- 9328 pF
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