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AP9565GEM-HF

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The AP9565GEM-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -5.2 to -6.5 A, Drain Source Resistance 38 to 48 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage -0.8 to -2.5 V. Tags: Surface Mount. More details for AP9565GEM-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP9565GEM-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -40 V, -5.2 to -6.5 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.2 to -6.5 A
  • Drain Source Resistance
    38 to 48 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    -0.8 to -2.5 V
  • Gate Charge
    13 to 20 nC
  • Switching Speed
    6 to 37 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Note
    Input Capacitance :- 1570 pF
View details on the manufacturer's website
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