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AP99T03GP-HF

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The AP99T03GP-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 120 to 200 A, Drain Source Resistance 2.5 to 4 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2.5 V. Tags: Through Hole. More details for AP99T03GP-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP99T03GP-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    30 V, 120 to 200 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 to 200 A
  • Drain Source Resistance
    2.5 to 4 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2.5 V
  • Gate Charge
    80 to 128 nC
  • Switching Speed
    16 to 60 ns
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 8000 pF
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