The AOCR33105E from Alpha and Omega Semiconductor is a Common-Drain Dual-N-Channel Enhancement Mode MOSFET that is ideal for battery protection switches, mobile device battery charging and discharging applications. It has a source-source breakdown voltage of over 12 V, a gate threshold voltage of 0.9 V, and a source-source on-resistance of 2.3 milli-ohms. This MOSFET has a continuous drain current of up to 30 A and a power dissipation of less than 3.1 W. It harnesses the benefits of trench-power MOSFET technology for enhanced efficiency and performance. This MOSFET, equipped with ultra-low source-source on-resistance, offers minimal resistance. It comes with electrostatic discharge (ESD) protection, enhancing safety and boosting battery performance, establishing itself as a dependable choice. This RoHS-compliant MOSFET is available in a surface-mount package that measures 2.08 x 1.45 mm.
