The AOTL66810Q from Alpha & Omega Semiconductor is an Automotive Qualified N-Channel Power MOSFET that is ideal for BLDC motor drive, battery management, and load switch applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 1.45 milli-ohms. This AEC-Q101-qualified power MOSFET has a continuous drain current of up to 420 A and a power dissipation of less than 425 W. It employs AOS's medium voltage AlphaSGT technology that offers excellent gate charge x drain-source on-resistance product value, resulting in improved figure of merit (FOM) to ensure balanced performance in hard-switching applications. This RoHS-Compliant MOSFET is available in a surface-mount package that measures 5 x 6 mm.