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CDM3-800

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CDM3-800 Image

The CDM3-800 from Central Semiconductor is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 3800 to 4800 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for CDM3-800 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CDM3-800
  • Manufacturer
    Central Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    10.40 x 6.73 x 2.38 mm
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    3800 to 4800 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    11.3 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Factor Correction, Alternative energy inverters, Solid State Lighting (SSL)

Technical Documents
View details on the manufacturer's website
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