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CDM4-600LR

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CDM4-600LR Image

The CDM4-600LR from Central Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 770 to 880 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for CDM4-600LR can be seen below.

Product Specifications

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Product Details

  • Part Number
    CDM4-600LR
  • Manufacturer
    Central Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    10.40 x 6.73 x 2.38 mm
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    770 to 880 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    16.63 nC
  • Power Dissipation
    38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Factor Correction, Alternative energy inverters, Solid State Lighting (SSL)

Technical Documents
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