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CMBDM3590

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CMBDM3590 Image

The CMBDM3590 from Central Semiconductor is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 1500 to 10000 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for CMBDM3590 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMBDM3590
  • Manufacturer
    Central Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    1.1 x 0.65 x 0.41 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    1500 to 10000 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.125 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-923
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable devices

Technical Documents
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