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CMLDM3737 TR

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The CMLDM3737 TR from Central Semiconductor is a MOSFET with Continous Drain Current 0.54 A, Drain Source Resistance 550 to 900 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for CMLDM3737 TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMLDM3737 TR
  • Manufacturer
    Central Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.54 A
  • Drain Source Resistance
    550 to 900 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    1.58 nC
  • Power Dissipation
    0.15 to 0.35 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Load switch/Level shifting, Battery charging, Boost switch, Electro-luminescent backlighting

Technical Documents
View details on the manufacturer's website
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