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CMNDM8001 BK

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CMNDM8001 BK Image

The CMNDM8001 BK from Central Semiconductor is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 1900 to 45000 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 0.6 to 1.1 V. Tags: Surface Mount. More details for CMNDM8001 BK can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMNDM8001 BK
  • Manufacturer
    Central Semiconductor
  • Description
    20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Dimensions
    1.05 x 1.05 x 0.5 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    1900 to 45000 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    0.6 to 1.1 V
  • Gate Charge
    0.658 nC
  • Power Dissipation
    0.25 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-953
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable equipment

Technical Documents
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