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CMPDM7003 TR

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CMPDM7003 TR Image

The CMPDM7003 TR from Central Semiconductor is a MOSFET with Continous Drain Current 0.28 A, Drain Source Resistance 1100 to 3000 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.49 to 1 V. Tags: Surface Mount. More details for CMPDM7003 TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMPDM7003 TR
  • Manufacturer
    Central Semiconductor
  • Description
    50 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.05 x 2.49 x 1.09 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.28 A
  • Drain Source Resistance
    1100 to 3000 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.49 to 1 V
  • Gate Charge
    0.764 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable equipment

Technical Documents
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